National Institute of Standards and Technology, Advanced Electronics Group/Nano Device Characterization Division

Position ID:National Institute of Standards and Technology-Advanced Electronics Group/Nano Device Characterization Division-WBG [#21347]
Position Title: Post Dotoral Research Associate in Wide Band-Gap Semiconductor Devices
Position Type:Postdoctoral
Position Location:Gaithersburg, Maryland 20899, United States [map]
Subject Areas: Electrical and Computer Engineering / Semiconductor Devices
Applied Physics / Renewable Energy
Microelectronics
Electronic Materials and Devices
Appl Deadline: finished (2022/03/08, finished 2022/06/17)
Position Description:   URMs  

*** this position has been closed and new applications are no longer accepted. ***

A post-doctoral research associate position is available through the University of Maryland. The research will be done at the Advanced Electronics Group in the Physical Measurement Laboratory at NIST in Gaithersburg, Maryland. We seek suitable candidates with expertise in the electrical characterization of devices and the governing device physics. The candidate will work with group members to conduct ground-breaking electrical characterization of wide and ultra-wide band-gap semiconductor devices. The candidate will also work with group members to develop new measurements to better understand the physics and kinetics of device operation and reliability. Fabrication of rudimentary test structures in NIST’s NanoFab facility is also expected. The ideal candidate for the proposed position would have completed their graduate research in wide band-gap device characterization. Experience in device fabrication is highly desirable. Candidates with experience in research on electron devices other than wide band-gap semiconductor will also be considered. Experience in designing custom measurements and characterization equipment is preferred.

The position has a stipend of $65,000+ per year for up to 2 years.

Candidate must have a PhD degree in Electrical Engineering or related discipline. CVs will be accepted on a continuing basis and should be sent by e-mail to kin.cheung@nist.gov.

US citizenship is not required.


Application Materials Required:
Submit the following items online at this website to complete your application:
And anything else requested in the position description.

Further Info:
https://www.nist.gov/pml/nanoscale-device-characterization-division/advanced-electronics-group
email
3019753093
 
100 Bureau Dr.
MS8120
Gaithersburg, MD 20899